1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-1-9]Electric Field Induced Absorption Changes in InGaAsP/InP Multi-Quantum Well

A. Ajisawa、K. Nishi、T. Yanase、M. Fujiwara、R. Lang(1.Opto-Electronics Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1985.B-1-9
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