1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1985 Conference on Solid State Devices and Materials

1985 Conference on Solid State Devices and Materials

1985年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[C-1-3]Artificially-Designed P-Type Amorphous Semiconductor Produced from Boron-Doped a-Si: H/ Undoped a-Si1-xNx:H Superlattices

Seiichi Miyazaki、Naoki Murayama、Masataka Hirose(1.Department of Electrical Engineering, Hiroshima university)
https://doi.org/10.7567/SSDM.1985.C-1-3
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