1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[A-3-1]Oxygen-Doped Si Epitaxial Films for Si Hetero- Bipolar Transistors

M. Tabe、M. Takahashi、Y. Sakakibara(1.NTT Electrical Communications Laboratories)
https://doi.org/10.7567/SSDM.1986.A-3-1
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