1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[B-3-1]1800V Non-Latch-Up Bipolar-Mode MOSFETs(IGBT) Fabricated by Silicon Wafer Direct Bonding

Akio Nakagawa、Yoshihiro Yamaguchi、Kiminori Watanabe Hiromichi Ohashi、Masaru Shimbo(1.Toshiba Research & Development Center)
https://doi.org/10.7567/SSDM.1986.B-3-1
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