1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[B-3-4]High-Temperature Characteristics of CVD-Grown β-SiC p-n Junction Diodes

Akira Suzuki、Atsuko Uemoto、Mitsuhiro Shigeta、Katsuki Furukawa、Shigeo Nakajima(1.Central Research Laboratories, Engineering Center, Sharp Corporation)
https://doi.org/10.7567/SSDM.1986.B-3-4
PDFダウンロードPDFダウンロード
戻る