1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[C-1-2]Initial Stage of Molecular Beam Epitaxial Growth of GaAs on (100) Si

H. TAKASUGI、T. UEDA、M. KAWABE Y. BANDO(1.Institute of Meterials Science, University of Tsukuba、2.National Institute for Research in Inorganic Materials)
https://doi.org/10.7567/SSDM.1986.C-1-2
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