1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[C-3-3]Formation of Buried Isolation Layer by Implanting Focused B Ion Beam in GaAs Multilayer Using FIBI-MBE System

Hiroshi Arimoto、Tetsuo Morita、Akira Takamori、Yasuo Bamba、Eizo Miyauchi、Hisao Hashimoto(1.Optoelectronics Joint Research Laboratory)
https://doi.org/10.7567/SSDM.1986.C-3-3
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