1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[C-3-5]Disorder Induced Gap State Model for Anomalous C-V Carrier Concentration Profiles at Epitaxially Grown Interfaces

Hideki Hasegawa、Eiji Ikeda、Hideo Ohno(1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)
https://doi.org/10.7567/SSDM.1986.C-3-5
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