1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[D-1-2]InGaAlP Transverse Mode Stabilized Visible Laser Diodes Fabricated by MOCVD Selective Growth

Masayuki Ishikawa、Yasuo Ohba、Yukio Watanabe Hiroko Nagasaka、Hideto Sugawara Motoyuki Yamamoto、Gen-ichi Hatakoshi(1.Research and Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1986.D-1-2
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