1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1986 International Conference on Solid State Devices and Materials

1986 International Conference on Solid State Devices and Materials

1986年8月20日〜8月22日Tokyo Prince Hotel, Tokyo, Japan

[D-3-3]Monolithic Integration of High-Power Buried Stripe (GaAl) As Laser with Laser with High Frequency Modulator MESFET Circuit

Ken Hamada、Noriyuki Yoshikawa、Hirokazu Shimizu、Tatsuo Otsuki、Akio Shimano、Kunio Itoh、Gota Kano、Iwao Teramoto(1.Semiconductor Laboratory Matsushita Electronics Corporation)
https://doi.org/10.7567/SSDM.1986.D-3-3
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