1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-1-2]A 5.4μm2 Sheath-Plate-Capacitor DRAM Cell with Self-Aligned Storage-Node Insulation

T. Kaga、Y. Kawamoto、T. Kure、Y. Nakagome、M. Aoki、T. Makino、H. Sunami(1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)
https://doi.org/10.7567/SSDM.1987.A-1-2
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