1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-1-3]A 5.4μm2 Stacked Capacitor DRAM Cell with 0.6μm Quadruple-Polysilicon Gate Technology

S. Kimura、Y. Kawamoto、N. Hasegawa、A. Hiraiwa、M. Horiguchi、M. Aoki、T. Kisu、H. Sunami(1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)
https://doi.org/10.7567/SSDM.1987.A-1-3
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