1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-1-4]MeV-Boron Implanted Buried Barrier for Soft Error Reduction in Megabit DRAM

Y. Matsuda、K. Tsukamoto、M. Inuishi、M. Shimizu、M. Asakura、K. Fujishima、J. Komori、Y. Akasaka(1.LSI R&D Lab. Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1987.A-1-4
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