1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-2-3]Effects of Parasitic Resistance and Hot-Electron-Degraded Transconductance on Lower Submicron P and N-MOSFET Characteristics

I. Kamohara、T. Wada、H. Tango(1.VLSI Research Center,Toshiba Corp.)
https://doi.org/10.7567/SSDM.1987.A-2-3
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