1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-3-5]High Performance Superthin Film Transistor (SFT) with Twin Gates

Hisao HAYASHI、Michio NEGISHI、Takefumi OHSHIMA、Takashi NOGUCHI、Yuji HAYASHI、Toshikazu MAEKAWA、Takeshi MATSUSHITA(1.R & D Department, Semiconductor Group, SONY Corp.)
https://doi.org/10.7567/SSDM.1987.A-3-5
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