1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[A-3-6]6000V Gate Turn-Off Thyristor (GTO) with N-Buffer and New Anode Short Structure

Tsuneo Ogura、Mitsuhiko Kitagawa、Hiromichi Ohashi、Akio Nakagawa(1.Research and Development Center and Tamagawa Works, Toshiba Corp.)
https://doi.org/10.7567/SSDM.1987.A-3-6