1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-1-2]Low-Resistance Non-Alloyed Contacts to n-GaAs Using InAs/Graded InGaAs/GaAs Structure

Takumi NITTONO、Hiroshi ITO、Osaake NAKAJIMA、Tadao ISHIBASHI(1.NTT Electrical Communications Laboratories)
https://doi.org/10.7567/SSDM.1987.B-1-2
PDFダウンロードPDFダウンロード
戻る