1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-1-3]Analysis of Planar Channeling Effects on the Threshold Voltage Uniformity of GaAs MESFETs Using Stereographic Projection

Hitoshi MIKAMI、Naotaka UCHITOMI、Nobuyuki TOYODA(1.VLSI Research Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1987.B-1-3
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