1987 Conference on Solid State Devices and Materials
1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
1987 Conference on Solid State Devices and Materials
1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
[B-1-4]Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam
Jin-Zhong YU、Tamio HARA、Takashi YOSHINAGA、Manabu HAMAGAKI、Yoshinobu AOYAGI、Susumu NAMBA(1.The Institute of Physical and Chemical Research (RIKEN)、2.Institute of Semiconductors, Chinese Academy of Sciences、3.Central Research Laboratory, Tokyo Electron Limited)
