1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-2-2]1.54μm Emission from Er-Doped GaAs and InP Grown by Metalorganic Chemical Vapor Deposition

Kunihiko Uwai、Hiroshi Nakagome、Kenichiro Takahei(1.NTT Electrical Communications Laboratories)
https://doi.org/10.7567/SSDM.1987.B-2-2
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