1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-3-1]Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD

H. Iwano、Y. Tsunekawa、M. Shimada、H. Komatsu、T. Seki、Y. Yamazaki、T. Takamura、H. Ohshima(1.Research and Development Div., SEIKO EPSON CORPORATION)
https://doi.org/10.7567/SSDM.1987.B-3-1
PDFダウンロードPDFダウンロード
戻る