1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-3-2]Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers

Toshiro HAYAKAWA、Masafumi KONDO、Takahiro SUYAMA、Kosei TAKAHASHI、Saburo YAMAMOTO、Toshiki HIJIKATA(1.Central Research Laboratories, Sharp Corporation)
https://doi.org/10.7567/SSDM.1987.B-3-2
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