1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-3-5]High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes

Masayuki ISHIKAWA、Kazuhiko ITAYA、Yukio WATANABE、Gen-ichi HATAKOSHI、Hideto SUGAWARA、Yasuo OHBA、Yutaka UEMATSU(1.Research and Development Center. Toshiba Corporation)
https://doi.org/10.7567/SSDM.1987.B-3-5
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