1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-4-1]Absolute Lattice Parameter Measurement of GaAs Crystals Using Monochromatic Synchrotron Radiation

K. Usuda、S. Yasuami、Y. Higashi、H. Kawata、M. Ando(1.Research and Development Center, Toshiba Corporation、2.Photon Factory, National Laboratory for High Energy Physics)
https://doi.org/10.7567/SSDM.1987.B-4-1
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