1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-5-3]Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure

T. Kato、H. Kano、M. Hashimoto、H. Sakaki、I. Igarashi(1.Toyota Central Research and Development Laboratories Inc.、2.Institute of Industrial Science, The University of Tokyo)
https://doi.org/10.7567/SSDM.1987.B-5-3
PDFダウンロードPDFダウンロード
戻る