1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-6-1]Growth of GaAs Layers on (001) Si Substrates

S. Naritsuka、C. Nozaki、N. Sugiyama、Y. Nishikawa、S. Yasuami、Y. Kokubun(1.Research and Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1987.B-6-1
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