1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-6-2]Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy

Shin Yokoyama、Dai Yui、Takashi Shiraishi、Mitsuo Kawabe(1.Institute of Materials Science, University of Tsukuba)
https://doi.org/10.7567/SSDM.1987.B-6-2
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