1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-7-1]Se Atomic Planar Doping to GaAs by MOCVD and Its Application to Two-Dimensional Electronic Devices

Yasufumi FUJIWARA、Yoshito FUKUMOTO、Takeshi KOBAYASHI、Yoshihiro HAMAKAWA(1.Faculty of Engineering Science, Osaka University)
https://doi.org/10.7567/SSDM.1987.B-7-1
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