1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-7-2]Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures

Hee Chul LEE、Tanemasa ASANO、Hiroshi ISHIWARA、Seigo KANEMARU、Seijiro FURUKAWA(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
https://doi.org/10.7567/SSDM.1987.B-7-2
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