1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-7-3]Improvement in Conversion Efficiency of MOCVD GaAs Solar Cells using AlGaAs Buffer Layers

S. Ochi、N. Hayafuji、N. Ogasawara、M. Kato、K. Mitsui、K. Yamanaka、T. Murotani(1.LSI R&D Laboratory, Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1987.B-7-3
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