1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[B-7-4]Nb/Compound Semiconductor Heterostructures Epitaxially Grown by Interrupted Electron Beam Deposition

Masayoshi TONOUCHI、Koichi HASHIMOTO、Yoshiyuki SAKAGUCHI、Sadamu KITA、Takeshi KOBAYASHI(1.Faculty of Engineering Science, Osaka University)
https://doi.org/10.7567/SSDM.1987.B-7-4
PDFダウンロードPDFダウンロード
戻る