1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[C-3-1]The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching

Kazuyuki TSUNOKUNI、Kazuo NOJIRI、Sumi KUBOSHIMA、Kado HIROBE(1.Musashi Works, Hitachi, Ltd.、2.Hitachi Microcomputer Engneering, Ltd.、3.Kanagawa Works , Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1987.C-3-1
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