1987 Conference on Solid State Devices and Materials
1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
1987 Conference on Solid State Devices and Materials
1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
[C-3-2]Electron Spin Resonance Study of a New Positively Charged Defect in Device Oxides Damaged by Soft X-Rays
B. B. Triplett、T. Takahashi、K. Yokogawa、T. Sugano(1.Dept. of Electronic Engineering, University of Tokyo、2.Intel Researcher in Residence、3.Nippon Steel Corporation)
