1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1987 Conference on Solid State Devices and Materials

1987 Conference on Solid State Devices and Materials

1987年8月25日〜8月27日Nippon Toshi Center, Tokyo, Japan

[C-4-2]Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

Naotaka KURODA、Kentaro SHIBAHARA、Woosik YOO、Shigehiro NISHINO、Hiroyuki MATSUNAMI(1.Department of Electrical Engineering, Kyoto University、2.Department of Electrical Engineering, Kyoto Institute of Technology)
https://doi.org/10.7567/SSDM.1987.C-4-2
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