1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan

[A-3-4]Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650℃

T. Kobayashi、S. Iijima、S. Aoki、A. Hiraiwa(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1988.A-3-4
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