1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan
International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan

[A-7-4]Impurity Doping into Single and Poly Crystalline Silicon by a Large Area Ion Doping Technique

Akihisa YOSHIDA、Masatoshi KITAGAWA、Kentaro SETSUNE、Takashi HIRAO(1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.1988.A-7-4