1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan

[A-9-5]Characteristics of Bipolar Transistors with Various Depth n+ Buried Layers Formed by High Energy Ion Implantation

A. Tamba、Y. Kobayashi、T. Suzuki、N. Natsuaki(1.Hitachi Research Laboratory, Hitachi Ltd.、2.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1988.A-9-5
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