1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1988 International Conference on Solid State Devices and Materials

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜8月26日Keio Plaza Hotel, Tokyo, Japan

[B-1-3]Experimental Evidence for Hole-Induced Interface State Generation under High Field Tunneling Current Stressing

Yoshio OZAWA、Masao IWASE、Akira TORIUMI(1.ULSI Research Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1988.B-1-3
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