1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-0-2]Limited Reaction Processing: Growth of Si-Ge/Si for Heterojunction Bipolar Transistor Applications

Jim GIBBONS、Judy HOYT、Cliff KING、Dave NOBLE、Chris GRONET、Martin SCOTT、Steve LADERMAN、Jeff ROSNER、Kris NAUKA、John TURNER、Ted KAMINS(1.Stanford Electronics Labs、2.Hewlett-Packard Co.)
https://doi.org/10.7567/SSDM.1989.A-0-2