1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-1-3]Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi2 and Si

Tomonobu HATA、Masanobu Tsuchitani、Kenji Kamiya、Susumu Horita(1.Faculty of Technology, Kanazawa University)
https://doi.org/10.7567/SSDM.1989.A-1-3
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