1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-2-1]Epitaxial Growth of Al(100) on Si(100) by Gas-Temperature-Controlled Chemical Vapor Deposition

Atsushi SEKIGUCHI、Tsukasa KOBAYASHI、Naokichi HOSOKAWA、Tatsuo ASAMAKI(1.ANELVA Corporation)
https://doi.org/10.7567/SSDM.1989.A-2-1
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