1989 Conference on Solid State Devices and Materials
1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
[A-2-3]Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing
Min-Lin CHENG、Armin KOHLHASE、Taketoshi SATO、Shin-ichi KOBAYASHI、Junichi MUROTA、Nobuo MIKOSHIBA(1.Research Institute of Electrical Communication, Tohoku University)
