1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-3-1]Effect of Atomic-Order Substrate Surface Planarization and O2 Partial Pressure Control during Growth on Crystalline Quality of Si/SrxBa1-xO/Si(111) Structure

Yuichi Kado、Yoshinobu Arita(1.NTT LSI Laboratories)
https://doi.org/10.7567/SSDM.1989.A-3-1
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