1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-3-4]Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1

Y. Suda、D. Lubben、T. Motooka、J. E. Greene(1.R&D Center, Toshiba Corporation、2.Coordinated Science Laboratory, University of Illinois)
https://doi.org/10.7567/SSDM.1989.A-3-4
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