1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-3-5]Abrupt and Defect-Free p+-n+ Junction Formed by Low-Temperature Photo-Epitaxy with Continuous Boron and Phosphorous Doping

Tatsuya Yamazaki、Hiroshi minakata、Takashi Ito(1.Fujitsu Laboratries Ltd.)
https://doi.org/10.7567/SSDM.1989.A-3-5
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