1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-4-2]Highly Stable Fluorinated Plasma CVD Silicon Nitride Film by SiH4 Addition for ULSI Passivation

K. Shimokawa、M. Yoshimaru、H. Matsui(1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)
https://doi.org/10.7567/SSDM.1989.A-4-2
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