1989 Conference on Solid State Devices and Materials
1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
[A-4-3]Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
Nobumasa SUZUKI、Toshiaki YOSHIKAWA、Kazuya MASU、Kazuo TSUBOUCHI、Nobuo MIKOSHIBA(1.Production Engineering Research Laboratory, Canon Inc.、2.Research Institute of Electrical Communication, Tohoku University)
