1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-5-3]Fabrication of Si/CoSi2/Si Permeable Base Transistor Using Self-Aligned and Two Step Molecular Beam Epitaxy

N. Nakamura、T. Ohshima、K. Nakagawa、M. Miyao(1.Central Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1989.A-5-3
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