1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-5-4]Low Leakage SOIMOSFETs Fabricated Using a Wafer Bonding Method

M. Hashimoto、A. Ogasawara、M. Shimanoe、A. Nieda、H. Satoh、A. Yagi、T. Matsushita(1.Research & Development Div., Semiconductor Group Sony Corp)
https://doi.org/10.7567/SSDM.1989.A-5-4
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