1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

1989年8月28日〜8月30日Nippon Toshi Center, Tokyo, Japan

[A-6-1]Effect of Trap-State on Field-Effect Mobility of MOSFET's Formed on Large Grain Poly-Si Films

Teruo KATOH、Norio HIRASHITA(1.Oki Electric Industry Co., Ltd, VLSI R&D Laboratory)
https://doi.org/10.7567/SSDM.1989.A-6-1
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